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Each NAND flash cell is essentially a modified transistor, specifically a MOSFET (metal-oxide-semiconductor field-effect transistor) with an additional “floating gate” or, in modern 3D NAND, a charge trap layer. This isolated structure is sandwiched between insulating layers of oxide, allowing it to trap and retain electrical charge (electrons) even when power is off.
The edge-to-edge layout issue should be fixed with v1.0.4
，这一点在电影中也有详细论述
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